| 摘要 |
In a solid state image pick-up device having a vertical overflow drain structure, a voltage to be applied to a semiconductor substrate is lowered in stepwise manner during a period, in which a charge photoelectrically converted by a photodiode is accumulated in the photodiode. Expansion of a dynamic range relative to an incident light intensity can be realized without performing high speed transfer in a vertical CCD register. Then, lowering power consumption and lowering of noise of the solid state image pick-up device becomes possible.
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