METHOD FOR FORMING CONNECTION PART AND SEMICONDUCTOR CHIP

摘要

PROBLEM TO BE SOLVED: To provide a DRAM cell laminated capacitor in self-alignment with the bit line. SOLUTION: A bit line on a support circuit 52 of a chip and a thick insulating body 58 on a mutual connection wiring 50S are provided with uniform topology, acting to give a self-alignment between a capacitor 108a and a bit line 50a. The bit line 50a and a support circuit mutual connection wiring 50S and formed of metal of the same level, however, patterned in separate masking processes. The laminated capacitors 108a are mutually separated by a distance shorter than the minimum dimension of a photolithographic system used for production.