| 摘要 |
PROBLEM TO BE SOLVED: To polish the surface to be polished of a wafer and the like, at a high speed, at a high accuracy, and evenly. SOLUTION: The first to the fourth polishing tools 210 to (213) have a diameter smaller than the diameter of a substrate W1, the polishing tools 210 to (213) are pressed to the substrate W1 and autorated, and, while they are revolved by the rotation of a revolution table 208, they are fluctuated and scanned in the diameter direction while rotating a rotary table 205 to support the substrate W1, so as to carry out a mechano-chemical polishing. |
