| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin-film solar cell, used as a light absorbing layer having a proper carrier concentration by forming a p-type compound semiconductor thin film, containing Ib group element, III group element and VIb group element in a range where the ratio of Ib group element to III group element has a particular value. SOLUTION: An Mo film 11 is formed on a blue plate glass substrate 10. On this film, Na is added together with Cu vapor deposition in the first half of the film formation, in the last half of the film formation, a p-type Cu (In1-x Gax )3 Se5 film 12 is formed by creating no Cu state or an insufficient state for Cu, without adding Na. By doing this, Cu/(In+Ga) is in the ronge of more than 0.22 but less than 0.75. Thereafter, the surface of p-type Cu (In1-x Gax )3 Se5 film 12 is washed, a CdS film of a high resistance n-type buffer layer 13 is formed, moreover, ZnO:Al film 14 of the transparent conductive film is formed, by doing this, a thin-film solar cell having a p-type CIS-based material in a new range of composition as a light-absorbing layer can be obtained. |
