发明名称 COOLING DEVICE AND METHOD OF EPITAXIAL BARREL REACTOR
摘要 PROBLEM TO BE SOLVED: To provide a barrel reactor and an operating method thereof, wherein semiconductor wafers treated in the reactor are substantially protected against metal contamination. SOLUTION: A barrel reactor 11 where material is chemically evaporated on a semiconductor wafer is equipped with a cooling device 14, wherein the cooling device 14 protects the semiconductor wafer against metal contamination caused by a deterioration in the metal surface of the barrel reactor 11. The deterioration in the metal surface of the reactor 11 is caused by the reaction of water on other materials (e.g. HCL). The cooling device 14 is equipped with a controller 90 which monitors the operating state of the reactor 11, and the controller 90 selects an operation set temperature corresponding to the detected operating state. In result, the metal surface of the reactor 11 is kept in a cooled state, whereby a corrosive chemical reaction is delayed, and the reactor 11 is kept at a higher temperature so as to prevent water absorption caused by condensation of moisture on the metal surface than that which is not in operation.
申请公布号 JPH1074699(A) 申请公布日期 1998.03.17
申请号 JP19970199846 申请日期 1997.07.25
申请人 MEMC ELECTRON MATERIALS INC 发明人 GAYLORD ERIC I;MUELLER CHARLES H
分类号 H01L21/205;C23C16/44;C23C16/48;C30B25/10;C30B25/14;(IPC1-7):H01L21/205 主分类号 H01L21/205
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