| 摘要 |
A method for forming a charge storage electrode in a semiconductor device, comprising the steps of: providing a transistor having an active region on a substrate, and forming an oxide layer on the resulting structure; providing a first conducting layer being patterned and being contacted with said active region of said transistor, wherein said first conducting layer has at least one recess on the surface thereof; forming a buried oxide layer on said recess; forming a first selective growing oxide layer only on said oxide layer; forming a second selective growing oxide layer on said first selective growing oxide layer and said buried oxide layer, exposing a portion of said first conducting layer; forming a second conducting layer on the resulting structure; patterning said second conducting layer and exposing a second selective growing oxide layer; and removing said second selective growing oxide layer, said first selective growing oxide layer, said buried oxide layer, and said oxide layer.
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