发明名称 Reduced power consumption sram
摘要 The continuing need for faster and denser SRAM memories places a constant increased demand on the power consumption of the memory devices. Much of the power consumption occurs during the pre-charge phase where it is common practice to bring up all pre-charge circuits at once and hold them active until the memory operations are complete. This invention describes a design where each pre-charge circuit connected to a group of memory cells through bit lines is activated at a separate time from the other pre-charge circuits. Thus each pre-charge circuit is active only during the time that useful work is being done with that portion of the memory. This reduces power consumption by not powering on circuits and precharging bit lines before they are actually needed.
申请公布号 US5729498(A) 申请公布日期 1998.03.17
申请号 US19960670376 申请日期 1996.06.25
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 YIH, JIAN-YAU;HO, YUNG-YUAN;TU, NANG-PING;HO, JUNG-DAR;TU, CHIEN-CHENG;HOR, SHAW-JIA
分类号 G11C7/12;G11C11/419;(IPC1-7):G11C7/00;G11C7/02;G11C8/00;G11C11/00 主分类号 G11C7/12
代理机构 代理人
主权项
地址