发明名称 |
Plasma process device |
摘要 |
<p>A plasma process device includes a process vessel (3) having a plasma generating area therein, a susceptor (6) provided in the process vessel for supporting a substrate (W) having a process surface, and a gas inlet means (23) for introducing a process gas into the plasma generating area. A dipole ring magnet (41) is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction. <IMAGE></p> |
申请公布号 |
EP0829900(A2) |
申请公布日期 |
1998.03.18 |
申请号 |
EP19970115918 |
申请日期 |
1997.09.12 |
申请人 |
TOKYO ELECTRON LIMITED;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ARAMI, JUNICHI;ONO, HIROO;KONDO, TOMOMI;MIYATA, KOJI |
分类号 |
H01J37/32;(IPC1-7):H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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