发明名称 |
Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films |
摘要 |
A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg1-xCdxTe (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or DELTA x=0.002) inhomogeneity in composition.
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申请公布号 |
US5728425(A) |
申请公布日期 |
1998.03.17 |
申请号 |
US19930028143 |
申请日期 |
1993.03.09 |
申请人 |
FUJITSU LIMITED |
发明人 |
EBE, HIROJI;SAWADA, AKIRA;TAKIGAWA, HIROSHI |
分类号 |
H01L21/205;C23C16/44;C23C16/448;C23C16/52;C30B25/02;C30B25/14;H01L21/31;(IPC1-7):C23C16/44 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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