| 摘要 |
A structure and a manufacturing method of a semiconductor device which prevents leakage of electric charges from a floating gate electrode to outside. The semiconductor device includes a capacitor insulating film at an upper surface and opposing sidewall surfaces of the floating gate electrode, which film includes a first silicon nitride film, a first silicon oxide film, a second silicon nitride film and a second silicon oxide film stocked in this order from the bottom. In such a structure, the capacitor insulating film prevents electric charges accumulated in the floating gate electrode as information from leaking outside from the vicinity of its end portion A.
|
