发明名称 |
Ion implanter |
摘要 |
An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.
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申请公布号 |
US5729027(A) |
申请公布日期 |
1998.03.17 |
申请号 |
US19950454548 |
申请日期 |
1995.05.30 |
申请人 |
HITACHI, LTD. |
发明人 |
TOKIGUCHI, KATSUMI;SEKI, TAKAYOSHI;KAJI, TETSUNORI |
分类号 |
C23C14/48;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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