| 摘要 |
A semiconductor device includes an InP substrate; a channel layer in which electrons, as charge carriers, travel; and an Alx1Ga1-x1Asy1Pz1Sb1-y1-z1 (0</=x1</=1, 0</=y1<1, 0<z1</=1) electron supply layer for supplying electrons to the channel layer. The electron supply layer has an electron affinity smaller than that of the channel layer and is doped with a dopant impurity producing n type conductivity. Since n type AlGaAsPSb is thermally stable, its electrical characteristics are not changed by heat treatment at about 350 DEG C., resulting in a thermally stable and highly reliable HEMT in which the characteristics hardly change with the passage of time during fabrication and operation. Further, a heterostructure including an electron supply layer and a channel layer and having a desired energy band structure is easily produced with a wide degree of freedom in designing the device.
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