Method of preparing compound semiconductor crystal

摘要

A compound semiconductor crystal has a reduced dislocation density. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and eta represents its activation factor: eta /=c.c./(3.6x1016) (3) A method which can prepare a compound semiconductor crystal doped with an impurity and having a prescribed carrier concentration with excellent reproducibility comprises the steps of melting a raw material for the compound semiconductor crystal in a crucible, and controlledly cooling the obtained raw material melt, thereby growing a crystal. The time required for cooling the raw material melt from the melting point T of the raw material to +E,fra 2/3+EE T is so controlled as to adjust the carrier concentration to a prescribed level.