发明名称 Spin-on conductor process for integrated circuits
摘要 A method of planarizing a non-planar substrate, such as filling vias and contact holes, spreads a suspension of a conducting material suspended in a liquid on a substrate. The suspension includes an organometallic material, preferably with particles of a polymerized tin or indium alkoxide. The material is spread by spinning the substrate after applying the suspension. The carrier liquid and organic groups are removed by baking and curing at elevated temperatures, thereby depositing the conductive material on the substrate in a layer which is more planar than the substrate and which has regions of greater and lesser thickness. A relatively brief etch step removes conductive material from regions of lesser thickness, leaving material filling vias or contact holes.
申请公布号 US5728626(A) 申请公布日期 1998.03.17
申请号 US19950553788 申请日期 1995.10.23
申请人 AT&T GLOBAL INFORMATION SOLUTIONS COMPANY;HYUNDAI ELECTRONICS AMERICA;SYMBIOS LOGIC INC. 发明人 ALLMAN, DERRYL D. J.;LEE, STEVEN S.
分类号 H01L21/288;H01L21/302;H01L21/3065;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L29/78;(IPC1-7):B05D3/02;B05D5/12;H01L21/445 主分类号 H01L21/288
代理机构 代理人
主权项
地址