| 摘要 |
PROBLEM TO BE SOLVED: To reduces loss during reversed recovery of a rectifying diode, without generating noise by forming a first low carrier life time region in a second semiconductor layer of first conductivity type having a low resistance and a second low carrier life time region in a first semiconductor layer of first conductivity type having high resistance. SOLUTION: A low resistance p+-type anode layer 32 is selectively diffused and formed on the surface of n-type cathode layer 31, an n+-type cathode layer 33 having a low resistance is diffused and formed on the rear surface of the n-type cathode layer 31, thereby constituting a diode. Also, a first low carrier life time region 381 is formed in the n+-type cathode layer 33, also a second low carrier life time region 382 is formed in the n-type cathode layer 31 at P+ anode 32 side. Because of this, the tail current can be reduced by the first low carrier life time region 381 , and the maximum current in the reverse direction can be reduced by the second low carrier life time region 382 , so that the loss during reverse recovery can be made small. |
