| 摘要 |
PROBLEM TO BE SOLVED: To shorten the time required for manufacturing a semiconductor device and, at the same time, the time required for shipping the semiconductor device after order receipt by forming a channel by utilizing metal layers provided on a semiconductor substrate at a prescribed interval as masks. SOLUTION: Field oxide films 3 are formed in the elementseparating area 4 on a silicon substrate 1, and the space between the films 3 is formed as an element-forming area 2. After forming the area 2, a gate-insulating film 5 is formed by thermally oxidizing the area 2, and a gate electrode 6 is formed on the film 5. Then, a source 7 and a drain 8 are formed in the substrate 1, and an interlayer insulating film 9 which covers the field oxide film 3 and gate electrode 6 is formed. After forming the film 9, a contact hole 10 is formed through the film 9, and metal layers 11 are formed on the hole 10. Finally, a channel 12 is formed below the gate electrode 6 by injecting an impurity into the substrate 1 by using the metal layers 11 as masks. |
