POLYCRYSTALLINE SILICON FILM, MANUFACTURE THEREOF, MANUFACTURE OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE, AND LASER ANNEALING DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a polycrystalline silicon which is excellent in quality and large in crystal grain diameter without causing any abrasion induced by dehydrogenation carried out when polycrystalline silicon is manufactured. SOLUTION: An energy beam has such an intensity profile that it starts decreasing gradually in intensity at a certain point in a scanning direction, the density of first energy impinging on any point on a non-single crystal silicon is set lower than 160mj/cm<2> , and when an energy beam of energy density 160mj/cm<2> or above is applied, its energy density is so set as to be lower than the sum of the maximum value of energy density before a preceding shot is made and 15mj/cm<2> , and the non-single crystal silicon is repeatedly irradiated with an energy beam of the substantial maximum energy density 10 to 120 times. After the non-single crystal silicon is irradiated with an energy beam of the maximum energy density, it is restrained from being irradiated with an energy beam of lower energy density 5 times or above.