| 摘要 |
PROBLEM TO BE SOLVED: To easily form ohmic contacts at the collector and the emitter of a semiconductor device by forming a first ohmic contact for obtaining contact on a first terminal and a second ohmic contact for obtaining contact on a first quantum well layer. SOLUTION: An ohmic contact (collector contact) of a collector of a semiconductor device is provided for a collector 5, after patterning and diffusing through a plurality of semiconductor layers 11. The collector contact has no problem because the contact cannot be ohm-contacted to the layers 11. In addition, the layers 11 are not doped, and a quantum well formed in a second active layer 25 contains no carrier. The ohmic contact 63 of the emitter of the semiconductor device is provided for the emitter 41 at a distance from a confining area 51 at which the patterned emitter 41 and the patterned collector 5 intersect each other. The ohmic contact 63 of the emitter 41 also does not form any ohmic contact with the semiconductor layers 11. |
