| 摘要 |
PROBLEM TO BE SOLVED: To smoothen an etching surface by constituting an etchant for etching a II-VI group compound semiconductor, of hydrogen peroxide water and chelate reagent, and by exposing a specific crystal surface for the etching surface. SOLUTION: A wafer laminating an MgXZn1- XSYSe1- Y (0<=X<1, 0<=Y<1) layer 102 on a substrate 101 of a semiconductor such as GaAs, Zn Se and so on by using a technology which is normally used for epitaxial growth of II-VI group compound semiconductors such as organic metal vapor epitaxial is produced. A photoresist mask 103 is formed thereon and etching of MgXZn1- XSYSe1- Y (0<=X<1, 0<=Y<1) layer by a liquid which is the mixture of chelate reagent of ethylene diamine tetraacetate disodium to perioxide hydrogen water is performed via an opening of the photoresist mask 103. Thereby the etching surface can be made smooth. |
