| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor which has high quality and has good electrical and chemical characteristics. SOLUTION: An SiC semiconductor substrate 11 is dipped in a buffered hydrofluoric acid for 10 minutes, and an oxide film on the surface of the semiconductor substrate 11 is removed by etching. Using metal organic vapor phase epitaxial growth technology (MOVPE method), TMA(trimethylaluminum), NH3 , and hydrogen for carrier are supplied onto the semiconductor substrate 11 at 1090 deg.C at the rate of 10μmol, 2.5L, and 2L per minute respectively to grow a buffer layer 12 which is made of single crystal AIN and is 15nm in thickness kon a principal plate of the semiconductor substrate 11. Nextly, the temperature is decreased to 800 deg.C and TMA, TMG(trimethylgallium), TMI(trimethylindium), and NH3 are supplied at the rate of 0.2μmol, 2μmol, 20μmol, and 5L per minute respectively to grow an AlGaInN single crystal layer 13 on the buffer layer 12. |
