| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for applying resist, wherein a fine resist pattern can be accurately formed and development defects can be effectively restrained. SOLUTION: When resist is discharged from a resist feed nozzle 5 and applied onto a wafer 3 in a resist applying chamber 1, inert gas such as N2 gas is previously introduced into the resist applying chamber 1 to make the inner pressure of the chamber 1 higher than an atmospheric pressure but lower than that irrside the resist feed nozzle 5, and then resist is discharged from the resist feed nozzle 5. After resist is applied, processes including a heating process where the wafer 3 is heated first are carried out under the above pressure. Or, after resist is applied, the inner pressure of the resist applying chamber 1 are reduced to an atmospheric pressure taking five or [more minutes, and then the wafer 3 is heated. |
