摘要 |
In a booster circuit for use in a semiconductor integrated circuit device that includes: a voltage detection circuit for detecting the boosted voltage with respect to a reference voltage; a pulse oscillator circuit in which oscillation is controlled in accordance with the results of voltage detection; and a charge pump circuit that uses the oscillation pulses to charge capacitors and generates a boosted voltage; a transfer control circuit is inserted between the pulse oscillator circuit and the charge pump circuit that is composed of a transfer gate which is ON/OFF-controlled by the detection output of the voltage detection circuit and a latch circuit. When the boosted voltage is higher than the set value and the detection output changes to low level, this transfer gate is immediately turned OFF, the oscillation output immediately preceding the OFF state is latched in the latch circuit, and oscillation pulses are not transferred to the charge pump circuit. During the time that the boosted voltage is higher than the set value, the latch signal held in the latch circuit is inputted and the logic of the oscillator circuit output and that of the latch circuit are reverse phased with respect to each other, and therefore, the charge pump circuit may be activated instantaneously when the boosted voltage falls below the set value.
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