| 摘要 |
PROBLEM TO BE SOLVED: To prevent interface films formed on an interface between a high dielectric film and a lower electrode from reacting with each other by a method, wherein an oxidative reaction inhibiting film is formed on the surface of a first conductive layer pattern on a semiconductor substrate and oxidized, a high-dielectric film and a second conductive layer are formed on the entire surface of the oxidative reaction inhibiting film and then patterned. SOLUTION: A first conductive layer pattern 40 is formed on an interlayer insulating film 36 which comprises a conductive plug 38 connected to a semiconductor substrate and subjected to a quick high-temperature thermal treatment in a nitrogen atmosphere, whereby a nitride film 42 as an oxidative reaction inhibiting film is formed on all the surface of the first conductive layer pattern 40. The nitride film 42 is subjected to a pre-treatment to turn an unreacted silicon contained in the nitride film 42 into a silicon oxide, a Ta2 O5 film 44 is formed as a high dielectric film on the entire surface of the nitride film 42, and a diffusion inhibiting 46 is formed on the entire surfaces of the Ta2 O5 film 44 and the interlayer insulating film 36. Furthermore, a second conductive layer 48 is formed on the entire surface of the diffusion inhibiting film 46, and the second conductive layer 48 and the Ta2 O5 film 44 are patterned. |
