发明名称 ALUMINIUM NITRIDE SINTERED COMPACT, MATERIAL CONTAINING METAL, ELECTROSTATIC CHUCK, PRODUCTION OF ALUMINUM NITRIDE SINTERED COMPACT, AND PRODUCTION OF MATERIAL CONTAINING METAL
摘要 PROBLEM TO BE SOLVED: To control volume resistivity by embedding a metal member in a compacted body comprising an AlN source material having a specified or lower content of metal elements except for Al and then sintering to make one body. SOLUTION: An AlN powder having <=100ppm metal content except for A1 is used and compacted by uniaxial pressing to produce a cylindrical preformed body. A metal mesh of metal wires having high melting point such as Mo having 0.03 to 0.5mm diameter is embedded in the preformed body to prepare a compacted body. Then the body is sealed in a carbon foil and calcined at 1850 to 2200 deg.C under >=100kg/cm<2> pressure to obtain a metal-containing material comprising an AlN sintered compact in which the metal material is embedded. The obtd. AlN sintered compact has 97.5 to 99.5% relative density and 1&times;10<9> to 1&times;10<13> &Omega;.cm volume resistivity at room temp. Then the surface of the insulating dielectric layer 4 of this sintered compact is shaped to obtain 1 to 10mm thickness. A hole 2 is formed from the back side of a supporting member 8. A terminal 9 is connected to the mesh electrode 9 to obtain an electrostatic chuck.
申请公布号 JPH1072260(A) 申请公布日期 1998.03.17
申请号 JP19960293129 申请日期 1996.10.16
申请人 NGK INSULATORS LTD 发明人 YAMADA NAOHITO;MORI YUKIMASA;BESSHO HIROKI;KOBAYASHI HIROMICHI
分类号 B23Q3/15;C04B35/581;C04B35/626;C04B35/74;C04B37/02;H01L21/683 主分类号 B23Q3/15
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