发明名称 METHOD OF FORMING METAL LINE IN PATTERNED INSULATOR LAYER
摘要 PROBLEM TO BE SOLVED: To enable a conductive line formed in a patterned insulator layer to be improved in thickness uniformity. SOLUTION: First, a thin (50 to 500Å) metal layer 142 of Vb metal, preferably niobium is formed on a patterned insulator layer 140. Then, a layer 148 of Al or Al, alloy is formed on the thin niobium layer. The aluminum layer 148 is subjected to chemical and mechanical polishing with oxide acid colloidal alumina slurry to make a niobium liner 142 exposed and oxidized. The niobium liner 142 functions as a polishing stop layer. Then, the exposed thin niobium liner 142 is removed by chemical and mechanical polishing. Or a thin layer of Vb metal or its alloy in place of niobium can be made to serve as a liner.
申请公布号 JPH1074764(A) 申请公布日期 1998.03.17
申请号 JP19970181491 申请日期 1997.07.07
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 RONAY MARIA
分类号 H01L21/3205;H01L21/304;H01L21/768;H01L23/532;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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