发明名称 |
Photoelastic stress sensor |
摘要 |
A stress detection apparatus is provided. A piece of semiconductor grade, single crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.
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申请公布号 |
US5728944(A) |
申请公布日期 |
1998.03.17 |
申请号 |
US19960605291 |
申请日期 |
1996.01.17 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
NADOLINK, RICHARD H. |
分类号 |
G01L1/24;G01N3/06;(IPC1-7):G01L1/24 |
主分类号 |
G01L1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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