STATIC INDUCTION TRANSISTORS

摘要

A static induction transistor includes a substrate and a drift layer with different doping levels. At least two mesas are formed on the drift layer and a heavily doped region is positioned on a top surface of each of the mesas. A gate contact extends along a bottom of a recess between the mesas and along a side of each of the mesas forming the recess. The gate contact may also extend along a portion of the top surface of each of the mesas. In one embodiment of the invention, a notch is formed in the top surface of the mesas between the gate contact and the heavily doped region.