发明名称 Verfahren und Vorrichtung zur Optimierung des Abschaltvorgangs eines nichteinrastenden, abschaltbaren Leistungs-Halbleiterschalters
摘要 This invention concerns a process for optimizing the power-down cycle of a non-engaging, interruptable power semiconductor switch (2) in a saturating power converter and a device for carrying out the process. According to the invention, when the interrupt signal (Saus) arrives, the gate emitter voltage (UGE) of this power-semiconductor switch (2) lowered with the help of a maximally permissible discharge current and its collector-emitter voltage (UCE) are monitored against exceeding a reference voltage (UCEref), the value of which is set so that the collector current (IC) begins to commutate, and upon reaching the reference value (UCEref), the discharge current is reduced to a value which is below the value of the maximum permissible discharge current. Thus, the power-down cycle of a non-engaging, interruptable power semiconductor switch (2) is largely optimized, so that the voltage rise and current drop times can be separately controlled.
申请公布号 DE19634612(A1) 申请公布日期 1998.03.12
申请号 DE19961034612 申请日期 1996.08.27
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 BRUCKMANN, MANFRED, 90475 NUERNBERG, DE;ECKEL, HANS-GUENTER, 91052 ERLANGEN, DE;HOFFMANN, INGOLF, 91074 HERZOGENAURACH, DE;SPARGER, STEFAN, 97342 MARKTSTEFT, DE;WEIS, BENNO, 91085 WEISENDORF, DE
分类号 H03K17/00;H03K17/042;H03K17/16;(IPC1-7):H03K17/042;H03K17/082;H03K17/567 主分类号 H03K17/00
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