发明名称 Thermoelectric device produced by quantum confinement in nanostructures
摘要 The present invention provides a thermoelectric device comprising a film of thermoelectric material deposited on a substrate, and one or more electrodes located within the thermoelectric film, wherein the thermoelectric film is partially oxidized to form an oxide layer, which is melted to form an electrical insulating and protective barrier on a top surface of the film.
申请公布号 US2007084499(A1) 申请公布日期 2007.04.19
申请号 US20050250606 申请日期 2005.10.14
申请人 DUTTA BIPRODAS 发明人 DUTTA BIPRODAS
分类号 H01L35/02 主分类号 H01L35/02
代理机构 代理人
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