| 摘要 |
In a method for anisotropic etching of a structure in an electrically conductive substance to be etched, use is made of an etchant which in concentrated solution is usable for isotropic etching of structures in the substance to be etched. The substance to be etched is contacted with the etchant in a solution which is so diluted that the etchant is unusable for isotropic etching. The etchant is subjected, adjacent to the substance to be etched, to an electric field of such a strength that anisotropic etching of the substance to be etched is accomplished. Moreover, an etching fluid is described, comprising an etchant in dilute solution, in which the etchant is present in a concentration of 200 mM at most, and use of such an etching fluid for making structures which are 50 .mu.m or less is also described.
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