Electromigration resistant metallization structures for microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold

摘要

Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 mum, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.