| 摘要 |
<p>A method for forming a dual gate structure of a semiconductor device is provided to restrain the degradation of a transistor by preventing boron ions from penetrating into a substrate due to a heat treatment using an improved insulating layer composed of an oxide layer and a nitride layer. A first insulating layer(405) is formed on a semiconductor substrate(400). A first gate conductive layer(410) is formed on the first insulating layer. A P+ type MOS region of the substrate is exposed to the outside by etching selectively the first gate conductive layer and the first insulating layer. A second insulating layer structure(420) is formed along an upper surface of the resultant structure. The second insulating layer structure is composed of an oxide layer and a nitride layer.</p> |
