摘要 |
Semiconductor sensor array, especially for chemical analysis, process control and for medical applications, has interdigital micro-electrodes (2) in the form of ion implanted layers within a semiconductor substrate (1) or within a dielectric insulator layer or layer structure on the semiconductor substrate. When the implanted layers are within the substrate, they comprise different dopant concentration regions in the form of conductive pn-junctions within a 10 mu m to 5 mm (preferably 200 mu m to 1 mm) thick Si or Ge substrate and, when they are within a dielectric insulator layer, the layer preferably contains SiO2, Al2O3, Si3N4 and/or Ta2O5 and is 5 nm to 1 mu m (preferably 20-500 nm) thick. Also claimed is a process for producing the above sensor array by ion implantation.
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申请人 |
FORSCHUNGSZENTRUM JUELICH GMBH, 52428 JUELICH, DE |
发明人 |
SCHOENING, MICHAEL, DR., 52428 JUELICH, DE;HORSTMANN, MANFRED, 52428 JUELICH, DE;KORDOS, PETER, PROF. DR., 52428 JUELICH, DE;LUETH, HANS, PROF. DR., 52076 AACHEN, DE |