| 摘要 |
PURPOSE:To prevent the short-circuit of an upper wiring layer due to the residue of buried material in the vicinity of a contact. CONSTITUTION:In a DRAM which maintains charge information with a polysilicon film 22 formed so as to face a polysilicon film 20 formed in the node part in a cell, the inclination angle of an interlayer insulating film 23 in the vicinity of a buried type contact 26 is relieved, by arranging a polysilicon film 1 for a dummy pattern composed of the same layer as the polysilicon film 20 in the vicinity of tungsten of the buried type contact 26. Thereby the contact buried material is prevented from remaining along a step at the time of etch back. |
