首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Reduzierung der Rißbildung im Material von III-V-Nitrid-Halbleiterbauelementen bei gleichzeitiger Maximierung der elektrischen Dotierung
摘要
申请公布号
DE19725578(A1)
申请公布日期
1998.03.12
申请号
DE19971025578
申请日期
1997.06.17
申请人
HEWLETT-PACKARD CO., PALO ALTO, CALIF., US
发明人
RUDAZ, SERGE L., SUNNYVALE, CALIF., US
分类号
H01L33/00;H01L33/32;H01S5/30;H01S5/32;H01S5/323;(IPC1-7):H01L33/00
主分类号
H01L33/00
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Inorganic fillers coated with latex
Corrosion protection for heat exchangers
Orthodontic mirror image brackets to removably receive the end portions of lingual arch wires
Air conveyor dispensing and recycling system
Cornea contour mapping
Eye fundus camera
Encapsulated fiber optic closure
Linear device for rapidly adjusting and immobilizing a movable part relative to a fixed part
Interactive video game of chance and player controlled subsystem therefor
Injection valve components and method
Anchor device for holding hoses against retracting slidable movement
Convection heat attachment and removal instrument for surface mounted assemblies
Vertical die casting machine
Casting method in high-pressure casting
Valve for use in controlling the functions of mine roof supports
Adjustable safety relief valve
Auxiliary towel rack shelves
Vacuum actuator for vehicle speed control
Explosive primer unit for instantaneous initiation by low-energy detonating cord
Self-adjusting cable control device