| 摘要 |
A semiconductor device is provided which comprises impurity diffusion regions for a source region and a drain region, a gate electrode, and a channel region under the gate electrode, and an insulation layer provided at least in a part of periphery of area including the channel region, the drain region, and the source region, wherein at least one of wirings for application of potential to the source region, the drain region, or the gate region passes over the impurity diffusion layer of a higher impurity concentration than the channel region of a conduction type different from the source and drain regions, and the impurity diffusion layer is placed directly underneath a thin portion of the insulation layer. With the constitution, the channel stop layer can be formed in a sufficient depth and impurity conentration in a short time, and the distance between the dense n-layer of the source or the drain and the channel stop layer can be shortened. <IMAGE> <IMAGE> |
