| 摘要 |
<p>A plurality of base (channel) regions 5 are formed at the surface of a semiconductor region 4 serving as a drain region of a power MOSFET, the base regions enclosing source regions 6. Projecting regions 20, formed on the region 4, are formed of a material having a bandgap wider than that of the region 4. For example, if the region 4 is Si, the regions 20 may be SiC. The regions 20 are connected to a drain contact 13 by contact regions 21 of the same material as the regions 20 but of a higher impurity concentration. The regions 20 may be sandwiched between gate electrodes with the interposition of insulation 8. Such a structure provides the power MOSFET with low on-resistance while retaining high breakdown voltage.</p> |
