| 摘要 |
The present invention discloses a method for forming a tungsten silicide layer in a semiconductor device. A wafer to be deposited with a tungsten silicide layer is loaded into a chamber. The tungsten silicide layer is primarily deposited, thinner than desired in the device by a Chemical Vapor Deposition utilizing WF6 and SiH4 gases. The fluorine contained in the primarily deposited tungsten silicide layer is removed by introducing a large quantity of SiH4 gas into the chamber. Again the tungsten silicide layer is secondarily deposited, thinner than desired in the device, on the tungsten silicide layer from which the fluorine is removed and, thereafter, the fluorine contained in the secondarily deposited tungsten silicide layer is removed by introducing a large quantity of SiH4 gas. Such a process is repeated until the tungsten silicide layer of the thickness desired in the device is deposited. Accordingly, the present invention can increase the reliability of the semiconductor device by removing defect factors which appear during a later process as a result of fluorine ions contained in the tungsten silicide layer.
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