| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a micro-miniaturized transistor with improved controllability, and to provide a method for manufacturing it by decreasing contact resistance between a wiring layer and a diffusion layer. SOLUTION: A gate electrode layer 2, on which an insulating layer 4 is stacked, is formed on a gate insulating film 1 formed on a semiconductor substrate 100. A side wall insulating film 6 is formed on the side wall of the gate electrode 2, and an insulating layer 7 is formed to cover the gate electrode 2 and the side wall insulating film 6. After a diffusion layer 9 is formed, an interlayer insulating film 10 and the insulating layer 7 formed on the whole surface are selectively etched to form an opening 12 for exposing the gate insulating film 1 to the gate electrode in a self-aligning manner. By removing the gate insulating film 1 from the bottom part of this opening, a wiring layer connected to the surface of the semiconductor substrate 100 is formed. |
