发明名称 FORMATION OF RETICLE MASK
摘要 PROBLEM TO BE SOLVED: To provide a method for formation of a reticle mask which eliminates the worry about the occurrence of defect by a misalignment. SOLUTION: This method forms the reticle mask by forming the reduced pattern reticle mask by using an original shape reticle mask having a reticle pattern arranged with a quadrilateral region and scribing line regions as a reduction element. In this method, the original shape reticle mask having the reticle pattern 27 provided with the scribing line regions 16a, b on the two sides of the quadrilateral circuit region 14 and provided with the dummy scribing line regions 16c, d on at least the remaining one side is used as the reduction element and any of the scribing line regions 16a, b on the two side and the dummy scribing line regions 16c, d are aligned, by which the plural circuit pattern regions of the reduced pattern reticle mask are formed.
申请公布号 JPH1069059(A) 申请公布日期 1998.03.10
申请号 JP19970145458 申请日期 1997.06.03
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHO ITSUCHIN;KIN TOTEN
分类号 G03F1/68;G03F7/20;H01L21/02;H01L21/027 主分类号 G03F1/68
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