| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a pattern in an X-ray mask, with less strain. SOLUTION: This pattern wiring method for manufacturing an X-ray mask contains a step wherein a uniform film layer 12 is formed on X-ray absorbing layers 13, 14, and an etching mask 15 is formed on the layers 13, 14. This step contains a process for providing a layer 20 of material sensitive to radiation, which layers has internal stress to be changed by exposure to radiation. The material 20 is, e.g. spirally exposed in relative regions 30, 31, 32, 33. In this case, internal stress in the layer 20 and changed internal stress in the relative regions 30, 31, 32, 33 are practically canceled, so that strain in the X-ray mask 15 is reduced.</p> |
