| 摘要 |
PCT No. PCT/FR95/00448 Sec. 371 Date Dec. 7, 1995 Sec. 102(e) Date Dec. 7, 1995 PCT Filed Apr. 7, 1995 PCT Pub. No. WO95/28006 PCT Pub. Date Oct. 19, 1995Semiconductor hybrid components, especially linear infrared detectors produced by hybridization. A main substrate has integrated thereon active elements which cannot be produced on a silicon substrate. The substrate is made, for example, of AsGa, InP, HgCdTe or PbTe. Several silicon chips are mounted on the main substrate, by hybridization using indium balls. These chips include the read and multiplexing circuits. The silicon chips remain of limited size (a few millimeters) so that the differential thermal expansion stresses are limited, but the detection array may be produced as one piece without butt-joining. It is therefore possible to produce arrays of great length (several centimeters) and of high resolution (at least a thousand points).
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