| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an X-ray lithography mask satisfying the disposition accuracy and resolution requirements of high-density microelectronic devices, by performing the optical exposure of a mask through using rough features, and by using the steps of performing electron-beam machinings, etc. SOLUTION: In this method, using the two lightography steps of optical and electron-beam lithography steps, an X-ray daughter mask is manufactured on an unmagnified X-ray mask substrate. For example, how the mask pattern obtained after etching by an optical tool is observed is examined. End portions 20, 21 of a large feature 22 are made round. The optical tool has not any resolution to generate a fine feature, or orthogonally make the corner angles of the end portions 20, 21 of the large feature 22, and resultly, the optical tool receives a picture reducing effect. But, thereby, the disposition accuracies of microelectronic devices are improved to remove the distortions of patterns from the optical printing tool and the mask manufacturing processes.</p> |
