GATE ALL AROUND TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A gate all-around type semiconductor device and a method for manufacturing the same are provided to reduce gate-induced drain leakage by reducing a contact area between a gate electrode and a source/drain layer. Source/drain layers(3) are formed separately from each other in a first direction on a semiconductor substrate(1). A nano-wire channel is formed to connect the source/drain layers which are separated from each other in the first direction. A gate electrode(5) is extended to a second direction perpendicular to the first direction between the source/drain layers. The gate electrode is extended to a third direction perpendicular to the first and second directions in order to cover the nano-wire channel partially. An insulating layer pattern(7) is formed between the source/drain layers in order to cover a part of the gate electrode and the nano-wire channel.