| 摘要 |
A programming apparatus of a flash memory cell is provided to control program speed and a program voltage variously, by controlling the amount of electrons transported between a source and a drain by applying a voltage without grounding the source or a silicon substrate. A memory cell programming apparatus includes a source(202), a drain(204), a control gate(212) and a floating gate(208) capable of storing charges in each memory cell formed on a silicon substrate(200), and performs programming by injecting hot carrier of charges to the floating gate. According to the programming apparatus, a voltage supply circuit(214) supplies a constant voltage to each control gate and each drain. A source voltage control circuit(216) controls the amount of a current between the source and the drain by controlling a voltage supplied to the source of each memory cell. A substrate voltage control circuit(218) controls channel region formed between the source and the drain by controlling a voltage supplied onto the silicon substrate formed with each memory cell. The programming apparatus controls a program voltage and program speed by controlling the amount of the current and the channel region.
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