DUAL-GATE SINGLE-ELECTRON TRANSISTOR HAVING SELF-ALIGNMENT AND FABRICATING METHOD OF THE SAME

摘要

A self-aligned single-electron transistor and a fabricating method thereof are provided to prevent generation of parasitic components of parallel MOSFETs by forming dual gates at both sides centering around a control gate without overlapping therewith. Source and drain regions(22a,24a) are formed on a semiconductor substrate to be separated from each other. A channel region is between the source and drain regions. A control gate(40b) is formed on the channel region. A gate dielectric(70) is formed on an upper portion of the channel region by surrounding the control gate. Two sidewall gates(80a,80b) are formed and self-aligned at both sides of an upper portion of the gate dielectric centering around the control gate. The source and drain regions are self-aligned at each sidewall gate. A dielectric sidewall spacer is formed along each sidewall gate on the source and drain regions.