发明名称 METHOD OF DATA CODING IN INITIAL ACTION AND SEMICONDUCTOR MEMORY DEVICE USING THE METHOD
摘要 A method of data coding in initial action of a semiconductor memory device and the semiconductor memory device using the method are provided to prevent a logic state of initial data from being changed by voltage drop during the initial action. A plurality of counter parts(C_1-C_5) sets a first group including at least one data and a second group or an n-th group including at least one data and flag information respectively, and counts the number of flag information and data of a first logic sate per group. A data coding part(430) codes data by applying a first mode and a second mode selectively per each group. The first mode codes data of each group in order to minimize the number of counted first logic states per group, and the second mode codes data per group in order to minimize the difference between the number of first logic states and the number of second logic states among flag information and data of the groups.
申请公布号 KR100800487(B1) 申请公布日期 2008.02.04
申请号 KR20060132026 申请日期 2006.12.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SANG YUN;LEE, JUNG BAE;CHOI, YOUNG DON
分类号 G11C7/20;G11C7/10 主分类号 G11C7/20
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