发明名称 BANK DISPERSING METHOD FOR SEMICONDUCTOR MEMORY ELEMENT
摘要 PROBLEM TO BE SOLVED: To enhance a data output speed by making the cell array of 2B bits to be cell units of 2X<+> Y pieces while dividing them into 2X and 2Y in horizontal and vertical directions and by dispersedly arranging banks of 2B<-> X<-> Y bits in respective cell units to provide many banks while reducing the increasing of the area of chips. SOLUTION: For example, in the case of constituting memory elements of 2<24> bits by four blocks provided with cell arrays of 2<21> bits at both sides around row decoders, each array is bisected in the horizontal and vertical directions to produce four cell units of 2<19> bits and the cell array divided into cell units is divided into cell bundles of 2<19> bits to produce banks respectively operate mutually and independently. That is, the whole of the memory cells has four banks 0-3 comprising cells 2<22> bits and the banks 0-3 are evenly dispersed in respective cell arraies as cell bundles of 2<19> bits. Thus, the entire area of data busses is made small and the data output speed is enhanced.
申请公布号 JPH1069767(A) 申请公布日期 1998.03.10
申请号 JP19970172281 申请日期 1997.06.27
申请人 HYUNDAI ELECTRON IND CO LTD 发明人 JO TEIGEN
分类号 G11C11/41;G11C5/02;G11C5/06;G11C7/10;G11C8/02;G11C11/40;G11C11/401;H01L21/8242;H01L27/108 主分类号 G11C11/41
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