发明名称 |
Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback |
摘要 |
A storage node 64 of a capacitor having increased charge storage capacity and a method for forming thereof. A doped polysilicon region 68 is formed. A thin layer of hemispherical grain polysilicon 70 is deposited over the doped polysilicon region 68. The doped polysilicon region 68 and the thin layer of hemispherical grain polysilicon 70 are etched using an etch chemistry that etches the doped polysilicon region 68 faster than the thin layer of hemispherical grain polysilicon 70 to increase the surface area of an upper surface 66 of the storage node 64.
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申请公布号 |
US5726085(A) |
申请公布日期 |
1998.03.10 |
申请号 |
US19950401740 |
申请日期 |
1995.03.09 |
申请人 |
CRENSHAW, DARIUS LAMMONT;WISE, RICK L.;MCKEE, JEFFREY |
发明人 |
CRENSHAW, DARIUS LAMMONT;WISE, RICK L.;MCKEE, JEFFREY |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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