| 摘要 |
In some embodiments, a chip with a metal heat flow path extending between a terminal of a transistor thereof and bulk semiconductor material of the chip (e.g., from the terminal to a substrate over which the transistor is formed or to the body of a semiconductor device adjacent to the transistor) and methods for manufacturing such a chip. The chip can be implemented by a semiconductor on insulator (SOI) process and can include at least one bipolar or MOS transistor, an insulator underlying the transistor, a semiconductor substrate underlying the insulator, and a metal heat flow path extending between a terminal of the transistor through the insulator to the substrate. Preferably, the metal heat flow path is a metal interconnect formed by a process step (or steps) of the same type performed to produce other metal interconnects of the chip. The chip can be an SOI chip including output circuitry and low-power circuitry, with at least one power transistor of the output circuitry, but no transistor of the low-power circuitry, having a terminal coupled to a metal heat flow path. Other embodiments are a chip including transistors and a feedback control loop coupled to at least one of the transistors for sensing temperature of the transistor and controlling at least one operating parameter of the transistor in response to the sensed temperature, and a method for manufacturing such chip.
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